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RH1034-1.2 Micropower Dual Reference DESCRIPTION
The RH1034-1.2 is a micropower, precision 1.2V reference combined with a 7V auxiliary reference. The 1.2V reference is a trimmed, thin-film, band-gap, voltage reference operating on only 20A of quiescent current. The RH1034-1.2 offers guaranteed drift, low temperature cycling hysteresis and good long-term stability. The low dynamic impedance makes the RH1034-1.2 easy to use from unregulated supplies. The 7V reference is a subsurface zener device for less demanding applications. The wafer lots are processed to Linear Technology's inhouse Class S flow to yield circuits usable in stringent military applications.
ABSOLUTE MAXIMUM RATINGS
(Note 1)
Operating Current ..................................................20mA Forward Current (Note 2) .......................................20mA Operating Temperature Range................ -55C to 125C Storage Temperature Range................... -65C to 150C Lead Temperature (Soldering, 10 sec) .................. 300C
L, LT, LTC and LTM are registered trademarks of Linear Technology Corporation. All other trademarks are the property of their respective owners.
PACKAGE INFORMATION
BOTTOM VIEW 1.2V 7V NC NC NC GND NC H PACKAGE 3-LEAD TO-46 METAL CAN 1 2 3 4 5 TOP VIEW 10 9 8 7 6 NC NC 1.2V 7V NC
W PACKAGE 10-LEAD CERPAC
BURN-IN CIRCUIT
20V
14k
19.1k
7V
1.2V
RH10341.2 BC
1
RH1034-1.2 TABLE 1: ELECTRICAL CHARACTERISTICS
SYMBOL PARAMETER 1.2V Reference VZ VZ IR Reverse Breakdown Voltage IR = 100A Reverse Breakdown Voltage 20A IR 2mA Change with Current 2mA IR 20mA Minimum Operating Current Temperature Coefficient rz Reverse Dynamic Impedance Low Frequency Noise Long-Term Stability 7V Reference VZ VZ IR Reverse Breakdown Voltage IR = 100A Reverse Breakdown Voltage 100A IR 1mA Change with Current 1mA IR 20mA Temperature Coefficient Long-Term Stability IR = 100A IR = 100A 60 20 6.70 7.30 140 250 1 1 1 6.60 7.40 190 350 2, 3 2, 3 2, 3 V mV mV ppm/C ppm/kHrs IR = 100A IR = 100A IR = 100A, 0.1Hz f 10Hz IR = 100A 3 4 20 1.210 1.240 2.0 8.0 20 60 1.0 1 1 1 1 1 1 1.195 1.255 4.0 15.0 30 60 2.0 2, 3 2, 3 2, 3 2, 3 2, 3 2, 3 V mV mV A ppm/C VP-P ppm/kHrs CONDITIONS NOTES MIN
(Preirradiation)
SUBGROUP -55C TA 125C SUBMIN TYP MAX GROUP UNITS
TA = 25C TYP MAX
TABLE 2: ELECTRICAL CHARACTERISTICS
SYMBOL PARAMETER 1.2V Reference VZ VZ IR rz Reverse Breakdown Voltage Reverse Breakdown Voltage Change with Current Reverse Dynamic Impedance Reverse Breakdown Voltage Reverse Breakdown Voltage Change with Current IR = 100A 20A IR 2mA 2mA IR 20mA IR = 100A 3 CONDTIONS
(Postirradiation) TA = 25C.
10KRAD(Si) 20KRAD(Si) 50KRAD(Si) 100KRAD(Si) 200KRAD(Si) NOTES MIN MAX MIN MAX MIN MAX MIN MAX MIN MAX UNITS 1.202 1.248 1.197 1.253 1.187 1.263 1.172 1.278 1.142 1.308 2.8 8.8 1.4 3.2 9.7 1.6 4.0 11.2 2.0 5.0 14.5 2.5 7.5 22.5 3.75 V mV mV
7V Reference VZ VZ IR IR = 100A 100A IR 1mA 1mA IR 20mA 6.796 7.304 6.796 7.304 6.796 7.304 6.791 7.309 6.786 7.314 150 275 150 275 150 275 150 275 150 275 V mV mV
Note 1: Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. Exposure to any Absolute Maximum Rating condition for extended periods may affect device reliability and lifetime.
Note 2: Forward biasing either diode will affect the operation of the other diode. Note 3: This parameter guaranteed by "reverse breakdown voltage change with current" test.
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RH1034-1.2 TABLE 3: POST BURN-IN ENDPOINTS AND DELTA LIMITS REQUIREMENTS TA = 25C
ENDPOINTS LIMITS SYMBOL PARAMETER VZ Reverse Breakdown Voltage CONDITIONS IR = 100A MIN 1.210 MAX 1.240 DELTA LIMITS MIN -0.003 MAX 0.003 UNITS V
TABLE 4: ELECTRICAL TEST REQUIREMENTS
MIL-STD-883 TEST REQUIREMENTS Final Electrical Test Requirements (Method 5004) Group A Test Requirements (Method 5005) Group B and D for Class S, End Point Electrical Parameters (Method 5005) *PDA applies to subgroup 1. See PDA Test Notes. SUBGROUP 1*,2,3 1,2,3 1,2,3 PDA Test Notes The PDA is specified as 5% based on failures from group A, subgroup 1, tests after cooldown as the final electrical test in accordance with method 5004 of MIL-STD-883. The verified failures of group A, subgroup 1, after burn-in divided by the total number of devices submitted for burn-in in that lot shall be used to determine the percent for the lot. Linear Technology Corporation reserves the right to test to tighter limits than those given.
TOTAL DOSE BIAS CIRCUIT
20V
14k
19.1k
7V
1.2V
RH10341.2 BC
Information furnished by Linear Technology Corporation is believed to be accurate and reliable. However, no responsibility is assumed for its use. Linear Technology Corporation makes no representation that the interconnection of its circuits as described herein will not infringe on existing patent rights.
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RH1034-1.2 TYPICAL PERFORMANCE CHARACTERISTICS
Reverse Breakdown Voltage (1.2V)
1.280 REVERSE BREAKDOWN VOLTAGE (V) 1.270 1.260 1.250 1.240 1.230 1.220 1 10 100 TOTAL DOSE KRAD (Si) 1000
RH10341.2 G01
Reverse Breakdown Voltage Change with Current (1.2V)
4.5 20A IR 2mA REVERSE BREAKDOWN VOLTAGE CHANGE WITH CURRENT (mV) 20 4.0
Reverse Breakdown Voltage Change with Current (1.2V)
2mA IR 20mA
IR = 100A
REVERSE BREAKDOWN VOLTAGE CHANGE WITH CURRENT (mV)
3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 1 10 100 TOTAL DOSE KRAD (Si) 1000
RH10341.2 G02
15
10
5
0 1 10 100 TOTAL DOSE KRAD (Si) 1000
RH10341.2 G03
Reverse Breakdown Voltage (7V)
7.002 IR = 100A REVERSE BREAKDOWN VOLTAGE (V) REVERSE BREAKDOWN VOLTAGE CHANGE WITH CURRENT (mV) 7.001 93.0 92.8 92.6 92.4 92.2 92.0 91.8 91.6 91.4
Reverse Breakdown Voltage Change with Current (7V)
100A IR 1mA REVERSE BREAKDOWN VOLTAGE CHANGE WITH CURRENT (mV) 172 170 168 166 164 162 160 158 1 10 100 TOTAL DOSE KRAD (Si) 1000
RH10341.2 G05
Reverse Breakdown Voltage Change with Current (7V)
1mA IR 20mA
7.000
6.999
6.998
6.997 1 10 100 TOTAL DOSE KRAD (Si) 1000
RH10341.2 G04
1
10 100 TOTAL DOSE KRAD (Si)
1000
RH10341.2 G06
I.D. No. 66-10-103412
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Linear Technology Corporation
1630 McCarthy Blvd., Milpitas, CA 95035-7417
(408) 432-1900 FAX: (408) 434-0507
LT 1008 REV A * PRINTED IN USA
www.linear.com
(c) LINEAR TECHNOLOGY CORPORATION 2008

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